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Week of December 18, 2011

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"100-GHz transistors from wafer-scale epitaxial graphene," by Y.M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.Y. Chiu, G. Grill, Ph. Avouris, Science, 327(5966): 662, 5 February 2010.

[Authors' affiliation: IBM T.J. Watson Research Center, Yorktown Heights, NY]

From the introduction: "Graphene is the thinnest electronic material, merely one atom thick, with very high carrier mobilities, and therefore it should enable transistors operating at very high frequencies. Here, we present field-effect transistors (FETs) fabricated on a 2-inch graphene wafer with a cutoff frequency in the radio frequency range, as high as 100 GHz."

This 2010 report from Science was cited 34 times in current journal articles indexed by Thomson Reuters during July-August 2011. During that period, only two other physics papers published in the last two years, aside from reviews, attracted higher numbers of citations. Prior to the most recent bimonthly count, citations to the paper have accrued as follows:

May-June 2011: 29 citations
March-April 2011: 47
January-February 2011: 14
November-December 2010: 19
September-October 2010: 31
July-August 2010: 11
May-June 2010: 8
March-April 2010: 3

Total citations to date: 196

SOURCE: Hot Papers Database (Included with a subscription to Science Watch®, available from the Research Services Group of Thomson Reuters. The Hot Papers Database contains data on hundreds of highly cited papers published during the last two years. User interface permits searching by author, organization, journal, field, and more. Total citations, as well as citations accrued during successive bimonthly periods, can be assessed and graphed. New Hot Papers updates are produced every two months.


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