Corporate Research Fronts> Physical Sciences
July 2010
This list of corporate research fronts from Essential Science IndicatorsSM from Clarivate is from the first bimonthly period of 2010, and covers areas in the physical sciences. Source dates are March 31, 2004-February 28, 2010 (sliding 6-year period).
Research Front Name | % of corp. affiliations | Leading corp. |
---|---|---|
5 GBIT/S CARRIER-INJECTION-BASED SILICON MICRO-RING SILICON MODULATORS; HIGH SPEED SILICON MACH-ZEHNDER MODULATOR; MICROMETRE-SCALE SILICON ELECTRO-OPTIC MODULATOR | 57 | Intel Corp |
CONTINUOUS-WAVE RAMAN SILICON LASER; SILICON WIRE WAVEGUIDES; SILICON PHOTONIC CHIP; SILICON CHANNEL WAVEGUIDES | 38 | Intel Corp |
HIGH DIELECTRIC CONSTANT GATE OXIDES; HIGH-K GATE DIELECTRIC STACKS; HFO2 HIGH-DIELECTRIC-CONSTANT GATE OXIDE; POLYSILICON METAL OXIDE INTERFACE | 36 | IBM Corp |
GAAS PASSIVATION USING ATOMIC LAYER-DEPOSITED HIGH-KAPPA DIELECTRICS; NANOSCALE GERMANIUM MOS DIELECTRICS; AL2O3 GATE DIELECTRICS; HFO2 GATE DIELECTRICS | 32 | IBM Corp |
FULLY EPITAXIAL CO/MGO/CO MAGNETIC TUNNEL JUNCTIONS; SINGLE-CRYSTAL FE/MGO/FE MAGNETIC TUNNEL JUNCTIONS; GIANT TUNNEL MAGNETORESISTANCE RATIO | 30 | IBM Corp |
INDIUM GALLIUM ZINC OXIDE CHANNEL BASED TRANSPARENT THIN FILM TRANSISTORS; TRANSPARENT FLEXIBLE THIN-FILM TRANSISTORS AMORPHOUS OXIDE SEMICONDUCTORS | 28 | Hewlett-Packard Corp |
HYDROGEN STORAGE MATERIALS; HYDROGEN STORAGE REACTIONS; ENHANCED HYDROGEN STORAGE KINETICS; HYDROGEN SORPTION PROPERTIES | 27 | Toyota Industries Corp |
LOW VOLTAGE CMOS DIRECT INJECTION-LOCKED FREQUENCY DIVIDER; MILLIMETER-WAVE CMOS DESIGN; FULLY INTEGRATED 24-GHZ EIGHT-ELEMENT PHASED-ARRAY RECEIVER | 24 | Infineon Technologies AG |
NANOSCALE MAGNETIC TUNNEL JUNCTIONS; LOW-RESISTANCE MAGNETIC TUNNEL JUNCTIONS; SPIN-TRANSFER SWITCHING; DOUBLE-POINT-CONTACT SPIN-TRANSFER DEVICES | 22 | Hitachi Global Storage Technologies |
PHOTONIC CRYSTAL WAVEGUIDES; SILICON PHOTONIC CRYSTALS; FLAT BAND SLOW LIGHT; PHOTONIC CRYSTALS FEATURING SPATIAL PULSE COMPRESSION | 21 | IBM Corp |
NONPOLAR M-PLANE INGAN/GAN LASER DIODES; HIGH EXTERNAL EFFICIENCY M-PLANE INGAN LIGHT EMITTING DIODES; HIGH-QUALITY NONPOLAR M-PLANE GAN SUBSTRATES GROWN | 20 | Mitsubishi Chemical Corp |
NON-VOLATILE POLYMER MEMORY DEVICE; NONVOLATILE MEMORY ELEMENTS; CROSS-POINT MEMORY CELLS | 20 | Rohm & Haas Co |
2004-2010_1 |
Citing URL: http://sciencewatch.com/dr/crf/2010/10-jul-crf-phy/
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